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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode 2SC4769 APPLICATIONS Ultrahigh-definition color display Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Maximum absolute ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 7 16 60 3 150 -55~150 ae ae UNIT V V V A A W W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4769 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=5A;IB=1.7 A IC=5A;IB=1.7 A IC=100mA;IB=0 VEB=4V IC=0 VCB=800V IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=5A ; VCE=5V IEC=7A 8 3 8 2.0 V 800 40 130 10 1 |I MIN TYP. MAX 5 1.5 UNIT V V V mA A mA SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 VF Switching times tstg tf Storage time Fall time IC=4A;RL=33.3| IB1=0.8A;- IB2=1.6A VCC=200V 3.0 0.1 0.2 |I |I s s hFE-2 classifications 1 3-5 2 4-6 3 5-8 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4769 Fig.2 Outline dimensions JMnic |
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